onsemi NSVT65010MW6T1G

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
$ 0.105
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DistributorSKUMinPkg
DigiKey
2
NSVT65010MW6T1GOSCT-ND2151Cut Tape
NewarkNSVT65010MW6T1G06KTape & Reel
Onlinecomponents.comNSVT65010MW6T1G07500Bulk
Master ElectronicsNSVT65010MW6T1G07500
AvnetNSVT65010MW6T1G030K
20h

Schede tecniche e documenti

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IHS

Datasheet7 pagine10 anni fa

Master Electronics

onsemi

Cronologia dell'inventario

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-07-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi NSVT65010MW6T1G fornite dai suoi distributori.

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
IHS
Cut Tape (CT) Surface Mount 2PNP (Dual) 6 Bipolar (BJT) Transistor Array 220 @ 2mA 5V 15nA ICBO 380mW 100MHz
Fly-Wing Technology
Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R Automotive AEC-Q101
Verical
650mV@ 5mA,100mA 2 PNP (Dual) 380mW 5V 15nA 80V 65V 100mA SOT-363-6 2mm*1.25mm*900¦Ìm
UnikeyIC
TRANS 2PNP 65V 0.1A SC88-6 / Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Win Source
TRANS, DUAL PNP, -65V, SOT-363; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -65V; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 0.9hFE; Transistor Case Style: SOT-363; N
Farnell

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