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onsemi NSR20F30NXT5G

Schottky Barrier Diode, 30 V, 2.0 A, Low IR DSN2 0603 Schottky Diode 30 V 2A
$ 0.2
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Master Electronics

Datasheet3 pagine12 anni fa

IHS

Newark

Farnell

TME

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2010-03-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

Schottky Barrier Diode, 2.0 A, 20 V DSN2 0603 Schottky Diodes 20 V 2A

Descrizioni

Descrizioni di onsemi NSR20F30NXT5G fornite dai suoi distributori.

Schottky Barrier Diode, 30 V, 2.0 A, Low IR DSN2 0603 Schottky Diode 30 V 2A
onsemi Schottky Diodes Diodes, 2A, 30V, surface mount, DSN - 0603encapsulation, 2needle
NSR20F30NXT5G Series 30 V 2 A Surface Mount Schottky Barrier Diode - DSN2
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon
DIODE, SCHOTTKY, 2A, 30V, 0603; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 2A; Forward Voltage VF Max: 480mV; Forward Surge Current Ifsm Max: 28A; Operating Temperature Max:
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The devices are in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higer efficiency and meeting reduced space requirements.
Configuration = Single / Peak Average Forward Current (If(AV)) A = 2 / Reverse Repetitive Voltage Max. (Vrrm) V = 30 / Forward Voltage (Vf) mV = 480 / Reverse Current Max. uA = 150 / Peak Non-Repetitive Surge Current (Itsm) A = 28 / Power Dissipation (Pd) mW = 586 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = DSN2 / Pins = 2 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Thermal Resistance W/°C = 213 / Reflow Temperature Max. °C = 260

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