onsemi NSBC114EPDP6T5G

Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
$ 0.053
Production
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Prezzo e stock

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DistributorSKUMinPkg
Verical
3
NSBC114EPDP6T5G10.730136
Arrow ElectronicsNSBC114EPDP6T5G10.7301
Rochester ElectronicsNSBC114EPDP6T5G127.970
18h
DigiKey
2
NSBC114EPDP6T5GOSCT-ND79931Cut Tape
NewarkNSBC114EPDP6T5G08KTape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NSBC114EPDP6T5G.

IHS

Datasheet14 pagine7 anni fa

Master Electronics

Future Electronics

Newark

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiNSBC114EDP6T5G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dettagli
onsemiNSBA114EDP6T5G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dettagli
onsemiNSBC123JDP6T5G
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
Dettagli

Descrizioni

Descrizioni di onsemi NSBC114EPDP6T5G fornite dai suoi distributori.

Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Verical
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
NSBC114EPDP6 Series 50 V 0.1 A 339 mW NPN/PNP Bias Resistor Transistor- SOT-963
Future Electronics
Complementary Bipolar Digital Transistor (BRT)
onsemi
250mV@ 300¦ÌA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 408mW 500nA 50V 100mA SOT-963 1mm*800¦Ìm*370¦Ìm
UnikeyIC
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
Brt Transistor, 50V, 10K/10Kohm, Sot-963, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC114EPDP6T5G
Newark
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDP6T5G series two complementary BRT devices are housed in the SOT963 package which is ideal for low power surface mount applications where board space is at a premium.
North Star Micro

Immagini

Newark
Rochester Electronics

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