onsemi NJW0281G
$ 1.52
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Cronologia dell'inventario
Tendenza a 3 mesi: +58.40%
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Schede tecniche e documenti
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
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Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, 3 Pin
Toshiba2SC5242-O(Q)
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di onsemi NJW0281G fornite dai suoi distributori.
Bipolar Power Transistors, Complementary, 15 A, 250 V NPN
Power Bipolar Transistor, 15A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NJW Series 250 V 15 A Complementary NPN Power Transistor - TO-3P
ON SEMI NJW0281G NPN BIPOLAR TRANSISTOR, 15 A, 250 V, 3-PIN TO-3P
Trans GP BJT NPN 250V 15A 150000mW 3-Pin(3+Tab) TO-3P Tube
TRANSISTOR, NPN, 250V, 15A, TO3P; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 15A; DC Current Gain hFE: 75hFE; Transisto
General Purpose Transistors NPN Ic=15A Vceo=250V hfe=75~150 P=150W TO3P
Bipolar Transistor, Npn, 250V; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:250V; Frecuencia De Transición Ft:30Mhz; Disipación De Potencia Pd:150Mw; Corriente De Colector Dc:15A; Ganancia De Corriente Dc Hfe:75 |Onsemi NJW0281G
The superior gain linearity and safe operating area performance of these complementary transistors make them ideal for high fidelity audio amplifier output stages and other linear applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +58.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)250 V
Collector Emitter Breakdown Voltage250 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)250 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min75
Max Collector Current15 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation150 W
Schedule B8541290080
Transition Frequency30 MHz
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NJW0281G.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità