onsemi NJL21193DG

Tube Through Hole PNP SINGLE WITH BUILT-IN DIODE Bipolar (BJT) Transistor 25 @ 8A 5V 16A 200W 4MHz
$ 1.496
Obsolete
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Rochester ElectronicsNJL21193DG835
5h
VericalNJL21193DG835188
Microchip USANJL21193DG309600Tube
3d
Win SourceWS-NJL21193DG780024
6h
Worldway ElectronicsNJL21193DG11.1737Tube
10h

Schede tecniche e documenti

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IHS

Datasheet9 pagine20 anni fa

onsemi

Farnell

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Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi NJL21193DG fornite dai suoi distributori.

Tube Through Hole PNP SINGLE WITH BUILT-IN DIODE Bipolar (BJT) Transistor 25 @ 8A 5V 16A 200W 4MHz
Fly-Wing Technology
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 5 Pin
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Trans GP BJT PNP 250V 16A 200000mW 5-Pin(5+Tab) TO-264 Tube
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200W Medium Frequency PNP ThermalTrak Transistors
onsemi

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