onsemi NDS351N
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | NDS351N | 2702 | 600 | Tray | 4d | |||||||
| Win Source | WS-NDS351N | 6200 | 290 | 9h | ||||||||
| Worldway Electronics | NDS351N | 14.827 | 7 | Tape & Reel | 7h | |||||||
| Fmall Co., Limited | NDS351N | 14.220 | 6d | |||||||||
| Anlinkda | NDS351N | 43.703 | 15h |
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
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N CH POWER MOSFET, HEXFET, 30V, 1.2A, MICRO3; Transistor Polarity:N Channel; Con
Descrizioni
Descrizioni di onsemi NDS351N fornite dai suoi distributori.
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ
30V 1.1A 500mW 160m´Î@10V1.4A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Mosfet, N-Ch, 30V, 1.1A, Supersot-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
MOSFET, N SOT-23; Transistor type:MOSFET; Current, Id cont:1.1A; Resistance, Rds on:0.2ohm; Case style:SOT-23 (TO-236); Current, Idm pulse:10A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:351; Pins, No. of:3; Power dissipation:0.5W; Power, Pd:0.5W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance140 pF
Max Operating Temperature150 °C
Max Power Dissipation500 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation500 mW
Rds On Max160 mΩ
Rise Time16 ns
Schedule B8541210080
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità