onsemi NDP6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ

Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB Rail

Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220, Through Hole

60V 48A 100W 20m´Î@10V24A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

100W(Tc) 16V 2V@ 250µA 60nC@ 5 V 1individualNChannel 60V 20mΩ@ 24A,10V 48A 2nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm

MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; SMD Marking:NDP6060L; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.