onsemi NDC7002N
$ 0.138
Production
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: -3.91%
Modelli CAD
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Modelli CAD
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi NDC7002N fornite dai suoi distributori.
Dual N-Channel Enhancement Mode Field Effect Transistor 50V, 0.51A, 2Ω
Transistor MOSFET Array Dual N-CH 50V 0.51A 6-Pin TSOT-23 T/R
Avnet Japan
Dual N-Channel 50 V 2 Ohm SMT Field Effect Transistor -SS0T-6
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -3.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)510 mA
Current Rating350 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)50 V
Dual Supply Voltage50 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20 pF
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation1.4 W
Rds On Max2 Ω
Resistance2 Ω
Rise Time6 ns
Schedule B8541210080
Threshold Voltage1.9 V
Turn-Off Delay Time11 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità