onsemi MUN5233T1G
$ 0.036
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MUN5233T1G | 3.042.000 | 3K | Tape & Reel | ||||||||
| Avnet | MUN5233T1G | 24.000 | 3K | 21h | ||||||||
| Newark | MUN5233T1G | 3000 | 1 | Cut Tape | ||||||||
| Verical | MUN5233T1G | 37.272 | 20135 | |||||||||
| Arrow Electronics | MUN5233T1G | 8700 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: -11.71%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5233T1G.
Modelli CAD
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Questo componente
Parti alternative
Price @ 1000
$ 0.036
$ 0.044
Stock
36,169,530
694,791
Authorized Distributors
6
3
Mount
-
Surface Mount
Case/Package
SC
SC
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
250 mV
hFE Min
80
80
Power Dissipation
202 mW
150 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMUN5235T1G
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 4.7 kohm
onsemiMUN5213T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 47 kohm, 47 kohm
ROHMDTC143ZUAT106
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
ROHMDTC123JUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHMDTC143TUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Descrizioni
Descrizioni di onsemi MUN5233T1G fornite dai suoi distributori.
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
NPN Bipolar Digital Transistor (BRT)
MUN5233 Series 50 V 100 mA NPN Silicon Bias Resistor Transistor - SOT-323
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
NPN - Pre-Biased 202mW 100mA 50V SC-70(SC-70-3) Digital Transistors ROHS
BRT TRANS, AEC-Q100, NPN, 50V, SOT-363-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -11.71%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation202 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5233T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità