onsemi MUN5135DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
$ 0.066
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DistributorSKUMinPkg
VericalMUN5135DW1T1G254063
Arrow Electronics
2
MUN5135DW1T1G25401
Rochester ElectronicsMUN5135DW1T1G12.000
21h
DigiKey
3
MUN5135DW1T1GOSCT-ND64541Cut Tape
Flip ElectronicsMUN5135DW1T1G9000
7d

Schede tecniche e documenti

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Master Electronics

Datasheet8 pagine8 anni fa

IHS

onsemi

Newark

Future Electronics

Cronologia dell'inventario

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiMUN5134DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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onsemiMUN5114DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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onsemiMUN5133DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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Descrizioni

Descrizioni di onsemi MUN5135DW1T1G fornite dai suoi distributori.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
IHS
Dual PNP Bipolar Digital Transistor (BRT)
onsemi
Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Verical
250mV@ 300¦ÌA,10mA 2 PNP - Pre-Biased (Dual) 385mW 500nA 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm
UnikeyIC
MUN5135DW1 Series 50 V 100 mA 256 mW Surface Mount PNP Transistor - SOT-363
Future Electronics
TRANS, DUAL PNP, -50V, -0.1A, SOT-363; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47koh
Farnell
Brt Transistor, 50V, 47K/2.2Kohm, Sot363; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:2.2Kohm; No. Of Pins:6 Pinrohs Compliant: Yes |Onsemi MUN5135DW1T1G
Newark
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.
North Star Micro

Immagini

Augswan
Newark
Farnell
TME
Farnell
Rochester Electronics
LZChips

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