onsemi MUN5111T1G
$ 0.042
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Cronologia dell'inventario
Tendenza a 3 mesi: -58.21%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi MUN5111T1G fornite dai suoi distributori.
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm
R1 = 10 KILO OHM, R2 = 10 KILO OHM PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor SOT-323
MUN5111T1G PNP DIGITAL TRANSISTOR, 100 MA 50 V 10 KOHMS, RATIO OF 1, 3-PIN SC-70
PNP Bipolar Digital Transistor (BRT)
35@5mA,10V One PNP - Pre-Biased 202mW 100mA 50V 500nA SC-70-3 Digital Transistors ROHS
onsemi PNP Transistor, SOT-323 (SC-70), SMD, -100mA Ic, -50V Vce
Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R
TRANSISTOR, RF, PNP, 50V, SOT-323-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -58.21%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation310 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Power Dissipation202 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height900 µm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5111T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità