onsemi MPSA65

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
$ 0.044
Obsolete
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DistributorSKUMinPkg
Rochester ElectronicsMPSA656662
4h
element14 APACMPSA6501
18h
FarnellMPSA6501
4h
Worldway ElectronicsMPSA6528.6267Bulk
9h
Fly-Wing TechnologyMPSA65126
3d

Schede tecniche e documenti

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IHS

Datasheet2 pagine17 anni fa
Datasheet3 pagine27 anni fa
Datasheet1 pagina0 anni fa
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Fairchild Semiconductor

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-09-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descrizioni

Descrizioni di onsemi MPSA65 fornite dai suoi distributori.

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Abacus Technologies
Bulk Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 625mW 100MHz
Fly-Wing Technology
Trans Darlington PNP 30V 1.2A 3-Pin TO-92 Bulk
Verical
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Fairchild Semiconductor
BIPOLAR TRANSISTOR, DARLINGTON; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:50000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1.2A; Gain Bandwidth ft Typ:100MHz; Hfe Min:20000; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
element14 APAC

Immagini

element14
Farnell
Rochester Electronics

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