This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Fairchild Semiconductor

Small Signal Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:10000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:300mA; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:MPSA63; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:30V

element14 APAC

Immagini

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

MPSA 63

Cronologia dell'inventario

Trend storico dell'inventario non disponibile

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageTO-92

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight201 mg

Technical

Collector Base Voltage (VCBO)-30 V

Collector Emitter Breakdown Voltage30 V

Collector Emitter Saturation Voltage1.5 V

Collector Emitter Voltage (VCEO)30 V

Continuous Collector Current-500 mA

Current Rating-1.2 A

Element ConfigurationSingle

Emitter Base Voltage (VEBO)-10 V

hFE Min5000

Max Breakdown Voltage30 V

Max Collector Current300 mA

Max Operating Temperature150 °C

Max Power Dissipation625 mW

Min Operating Temperature-55 °C

Number of Elements1

PackagingBulk

PolarityPNP

Power Dissipation625 mW

TerminationThrough Hole

Transition Frequency100 MHz

Voltage Rating (DC)-30 V

Dimensions

Height5.33 mm

Length5.2 mm

Width4.19 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MPSA63.

IHS

Datasheet4 pagine16 anni fa

Datasheet1 pagina0 anni fa

Datasheet2 pagine25 anni fa

Datasheet0 pagine0 anni fa

Datasheet4 pagine0 anni fa

onsemi

iiiC

Farnell

Fairchild Semiconductor

Conformità

Classificazione ambientale

China RoHSNon-Compliant

REACH SVHCAffected

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A