onsemi MPSA14

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92

500 mA, 80 V NPN Small Signal Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;

Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 500mA 625mW 125MHz

NPN Bipolar Darlington Transistor

Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Bulk

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):20000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:300mA; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:MPSA14; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:20000; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:30V; Voltage Vces:30V