onsemi MOCD207R2M
$ 0.402
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MOCD207R2M | 17.500 | 2500 | 2d | ||||||||
| Newark | MOCD207R2M | 189 | 1 | Cut Tape | ||||||||
| Verical | MOCD207R2M | 2000 | 20 | |||||||||
| Arrow Electronics | MOCD207R2M | 2063 | 1 | |||||||||
| Future Electronics | MOCD207R2M | 750.000 | 2500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -21.66%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2001-12-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi MOCD207R2M fornite dai suoi distributori.
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 60 mA, 2.5 kV, 100 %
8-pin SOIC Dual-Channel Phototransistor Output Optocoupler
SOIC8 SMT Dual Channel 70 V 2500 Vrms Phototransistor Optocoupler
Photocouplers Unidirectional optocoupler Viso=2.5KVrms VF(typ)=1.25V IF=60mA CTR=100~200% SOIC8_150MIL
The MOCD207M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
Channels = 2 / Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 150 / Isolation Voltage kV = 2.5 / Operating Temperature Max. °C = 100 / Current Transfer Ratio (CTR) Min. % = 100 / Current Transfer Ratio (CTR) Max. % = 200 / Operating Temperature Min. °C = -40 / Power Dissipation (Pd) mW = 150 / Forward Voltage (Vf) Max. V = 1.5 / Output Type = Phototransistor / Collector-Emitter Saturation Voltage Max. mV = 400 / Emitter−Collector Voltage (VECO) Max. V = 7 / Forward Current (If) Max. mA = 60 / Package Type = SOIC-8 / Reverse Voltage (Vr) V = 6
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -21.66%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight251.998911 mg
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio34 %
Dark Current50 nA
Fall Time2.2 µs
Forward Current60 mA
Forward Voltage1.55 V
Input Current30 mA
Isolation Voltage2500 Vrms
Max Collector Current150 mA
Max Input Current60 mA
Max Operating Temperature100 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-40 °C
Number of Channels2
Number of Circuits2
Number of Elements2
Output Current per Channel150 mA
Output Voltage70 V
PackagingTape & Reel
Power Dissipation250 mW
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time1.6 µs
Schedule B8541408000
Voltage6 V
Dimensions
Lead Pitch1.27 mm
Row Spacing5.94 mm
Width4.88 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità