onsemi MMUN2233LT1G
$ 0.036
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMUN2233LT1G | 80.000 | 32468 | 2d | ||||||||
| Newark | MMUN2233LT1G | 37 | 1 | Cut Tape | ||||||||
| Rochester Electronics | MMUN2233LT1G | 2 | 21h | |||||||||
| Flip Electronics | MMUN2233LT1G | 80.000 | 6d | |||||||||
| Onlinecomponents.com | MMUN2233LT1G | 0 | 3K | Bulk |
Cronologia dell'inventario
Tendenza a 3 mesi: -98.59%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2233LT1G.
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Questo componente
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Price @ 1000
$ 0.036
$ 0.025
Stock
4,238,511
672,861
Authorized Distributors
6
2
Mount
-
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
80
80
Power Dissipation
246 mW
200 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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onsemiMMUN2214LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm
onsemiMMUN2212LT1G
Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
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TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
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Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
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DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Descrizioni
Descrizioni di onsemi MMUN2233LT1G fornite dai suoi distributori.
Bipolar Transistors (BJT); MMUN2233LT1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 3
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
NPN SILICON BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2233LT1G NPN DIGITAL TRANSISTOR,100MA 50V 4.7 KOHM, RATIO OF 0.1,3-PIN SOT-23
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
ON Semiconductor MMUN2233LT1G PNP MOSFET 50V 100mA SOT-23 Tape Reel Transistor
NPN Bipolar Digital Transistor (BRT)
Pre Biased Triodes NPN Ic=100mA Vceo=50V hfe=80 P=400mW SOT23
TRANSISTOR, RF, NPN, 50V, SOT-23-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -98.59%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
TerminationSMD/SMT
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2233LT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità