onsemi MMBZ12VALT1G
$ 0.064
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Cronologia dell'inventario
Tendenza a 3 mesi: +112%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.50
Introduction Date1999-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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ESD Suppressor Diode Zener Uni-Dir/Bi-Dir 26V 3-Pin SOT-23 T/R / TVS DIODE 26VWM 46VC SOT23
onsemiMMBZ27VCLT1G
Uni-Directional 40 W 38 V Surface Mount Transient Voltage Suppressor -SOT-23-3
onsemiMMBZ27VALT1G
MMBZ Series 40 W 27 V Bi-Directional Surface Mount Zener TVS Diode - SOT-23-3
Descrizioni
Descrizioni di onsemi MMBZ12VALT1G fornite dai suoi distributori.
ESD Suppressor Diode Zener Uni-Dir/Bi-Dir 8.5V 12Vbr 17Vc 3-Pin SOT-23 T/R
Bi-Directional 40 W 17 V Surface Mount Transient Voltage Suppressor - SOT-23-3
Trans Voltage Suppressor Diode, 40W, 8.5V V(RWM), Unidirectional, 2 Element, Silicon, TO-236
Dual Common Anode Zener Diode Protection
MMBZ12VALT1G, DUAL UNI-DIRECTIONAL TVS DIODE, 40W, 3-PIN SOT-23
±5% 200nA 12V 300mW Freestanding SOT-23-3，TO-236 SMD mount 2.9mm*1.3mm*1mm
TVSDIODE, 0.225W, 8.5V, UNIDIR, SOT-23-3; Product Range: MMBZ Series; TVS Polarity: Unidirectional; Reverse Stand-Off Voltage Vrwm: 8.5V; Clamping Voltage Vc Max: 17V; Diode Case Style: SOT-23; No. of Pins: 3Pins; Breakdown Vo
These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers printers business machines communication systems medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +112%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Breakdown Voltage12 V
Clamping Voltage17 V
CompositionZener
DirectionUnidirectional
Element ConfigurationCommon Anode
ESD ProtectionYes
Forward Voltage900 mV
Leakage Current200 nA
Max Breakdown Voltage12.6 V
Max Operating Temperature150 °C
Max Output Current2.35 A
Max Power Dissipation225 mW
Max Reverse Leakage Current200 nA
Max Surge Current2.35 A
Min Breakdown Voltage11.4 V
Min Operating Temperature-55 °C
Number of Bidirectional Channels1
Number of Channels2
Number of Elements2
Number of Unidirectional Channels2
Operating Supply Voltage8.5 V
PackagingTape and Reel
Peak Pulse Current2.35 A
Peak Pulse Power 40 W
Peak Reverse Current200 nA
PolarityUnidirectional
Power Dissipation40 W
Power Line ProtectionNo
Power Rating40 W
Reverse Breakdown Voltage11.4 V
Reverse Standoff Voltage8.5 V
Schedule B8536300000
TerminationSMD/SMT
Test Current1 mA
Voltage Rating (DC)12 V
Working Voltage8.5 V
Dimensions
Depth1.3 mm
Height1.01 mm
Length2.9 mm
Width1.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMBZ12VALT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità