onsemi MJE5850G
$ 2.56
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | MJE5850G | 0 | 1 | Bulk | 1d | |||||||
| element14 APAC | MJE5850G | 0 | 1 | 2h | ||||||||
| Farnell | MJE5850G | 0 | 1 | 20h | ||||||||
| Microchip USA | MJE5850G | 237 | 150 | Tray | 3d | |||||||
| Win Source | WS-MJE5850G | 20 | 11 | 9h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MJE5850G.
Modelli CAD
Scarica il simbolo onsemi MJE5850G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica | |
 TraceParts | 3D | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Descrizioni
Descrizioni di onsemi MJE5850G fornite dai suoi distributori.
TRANSISTOR, BIPOLAR, SI, PNP, POWER, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, HFE 5
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube / TRANS PNP 300V 8A TO220AB
Bipolar (Bjt) Single Transistor, Pnp, -300 V, 80 W, -8 A, 15 Rohs Compliant: Yes |Onsemi MJE5850G
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
8.0 A, 300 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)350 V
Collector Emitter Breakdown Voltage300 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)300 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min5
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation80 W
Schedule B8541290080
Voltage Rating (DC)-300 V
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MJE5850G.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità