onsemi MJE13009G

12 A, 400 V NPN Bipolar Power Transistor
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
FarnellMJE13009G01
14h
element14 APACMJE13009G01
2h
Component Stockers USAMJE13009G19.353
>1wk
Win SourceWS-MJE13009G80035
15h
Worldway ElectronicsMJE13009G10.8227Tube
13h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MJE13009G.

IHS

Datasheet10 pagine14 anni fa

onsemi

Farnell

Jameco

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Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Parti correlate

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TRANSISTOR, BIPOLAR, SI, NPN, POWER, VCEO 700VDC, IC 4A, PD 2W, TO-220AB, HFE 40,FT 4MHZ
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onsemiTIP50
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 300mA 10V 1A 2W 10MHz
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onsemiBUL44G
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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NXP SemiconductorsPHE13007,127
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Dettagli

Descrizioni

Descrizioni di onsemi MJE13009G fornite dai suoi distributori.

12 A, 400 V NPN Bipolar Power Transistor
onsemi
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
IHS
Trans GP BJT NPN 400V 12A 3-Pin (3+Tab) TO-220AB Rail
Verical
Bipolar Transistors - BJT 12A 400V 100W NPN
Fly-Wing Technology
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):6; Frequency Min:100MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Newark
The MJE13009 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
North Star Micro

Immagini

Farnell
element14 APAC
B+D Enterprises
Distrelec
element14
Jameco
Newark
Farnell

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