onsemi MJB42CT4G
$ 0.506
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Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMJB45H11T4G
Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 50 W, TO-263 (D2PAK), Surface Mount
Descrizioni
Descrizioni di onsemi MJB42CT4G fornite dai suoi distributori.
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
ON SEMI MJB42CT4G PNP BIPOLAR TRANSISTOR, 6 A, 100 V, 3-PIN D2PAK
MJB Series 100 V 6 A PNP Complementary Silicon Plastic Power Transistor D2PAK-3
6.0 A, 100 V PNP Bipolar Power Transistor
Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R
Bipolar Transistors - BJT 6A 100V 65W PNP
ON SEMICONDUCTOR MJB42CT4G POWER TRANSISTOR, PNP, -100V D2-PAK
PNP Power Transistor 100V 6A 65W D2PAK
onsemi PNPTransistor, D2PAK (TO-263)encapsulation, SMD mount, Maximum DC collector current-6 A, maximum collector-emission voltage-100 V
POWER TRANSISTOR, PNP, -100V D2-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 65W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transis
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)100 V
Current Rating-6 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min15
Max Breakdown Voltage100 V
Max Collector Current6 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)-100 V
Dimensions
Height4.83 mm
Length10.29 mm
Width11.05 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità