onsemi KSC3265YMTF
$ 0.029
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -18.16%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-12-04
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
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Descrizioni
Descrizioni di onsemi KSC3265YMTF fornite dai suoi distributori.
Bipolar Transistors (BJT); KSC3265YMTF; ON SEMICONDUCTOR; NPN; 3; 25 V; 800 mA
KSC3265 Series 25 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 25V 0.8A 200mW 3-Pin SOT-23 T/R
TRANSISTOR, BIPOL, NPN, 25V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 200; Available until stocks are exhausted Alternative available
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -18.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)25 V
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency120 MHz
Gain Bandwidth Product120 MHz
hFE Min160
Max Breakdown Voltage45 V
Max Collector Current800 mA
Max Frequency120 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency120 MHz
Voltage Rating (DC)25 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità