onsemi KSC1815YTA
$ 0.071
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.14%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Descrizioni
Descrizioni di onsemi KSC1815YTA fornite dai suoi distributori.
Bipolar Transistor (BJT) NPN 50V 150mA 80MHz 400mW TO-92-3
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC1815 Series 50 V 150 mA Through Hole NPN Epitaxial Silicon Transistor-TO-92-3
Trans GP BJT NPN 50V 0.15A 400mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN Epitaxial Sil
General Purpose Transistor, TO-92, NPN, 50V
TRANSISTOR, BIPOL, NPN, 50V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 400mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE;
onsemi NPNTransistor, TO-92encapsulation, Through hole mounting, Maximum DC collector current150 mA, maximum collector-emission voltage50 V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -5.14%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating150 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product80 MHz
hFE Min120
Max Breakdown Voltage50 V
Max Collector Current150 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation400 mW
Schedule B8541210080
Transition Frequency80 MHz
Voltage Rating (DC)50 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità