onsemi ISL9R3060P2

Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-220AC Rail
$ 1.283
EOL
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Datasheet10 pagine4 anni fa
Technical Drawing1 pagina6 anni fa

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Fairchild Semiconductor

Future Electronics

onsemi

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2001-05-30
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

Parti correlate

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Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-220AC Rail
Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220
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STMicroelectronicsSTTH12R06D
DIODE, RECTIFIER, ULTRAFAST, VR 600V, IF 12A, PKG TO-220AC, VF 1.4V, TRR 45NS, TJ +175C
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STTH12R06 Series Turbo 2 12 A 600 V Ultrafast Rectifier Flange Mount -TO-220AC

Descrizioni

Descrizioni di onsemi ISL9R3060P2 fornite dai suoi distributori.

Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-220AC Rail
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-220AC
ISL9 Series Single 600 V 30 A 35 ns Flange Mount Stealth Diode - TO-220AC-2
Diode Standard 600V 30A Through Hole TO-220-2L
DIODE, FAST, 30A, 600V, TO-220; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:45ns; Forward Surge Current Ifsm Max:325A; Diode Case Style:TO-220; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifrm:70A; Current Ifsm:325A; Forward Voltage:2.4V; Junction Temperature Tj Max:175°C; Package / Case:TO-220; Reverse Recovery Time trr Typ:27ns; Termination Type:Through Hole
The ISL9R3060P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

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  • ON Semiconductor Inc.
  • onsemiconductor
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Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • ISL9R3060P2.