onsemi ISL9R3060G2

Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-247 Rail
EOL
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Datasheet9 pagine6 anni fa
Datasheet8 pagine21 anni fa

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2001-05-30
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

Parti correlate

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Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-247 Rail
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MicrochipAPT30DQ60BCTG
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTTH60W03CW
Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-247
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-247
MicrochipAPT40DQ60BCTG
Ultrafast Soft Recovery Rectifier Diode 600V 2 x 40A 3-Pin TO-247

Descrizioni

Descrizioni di onsemi ISL9R3060G2 fornite dai suoi distributori.

Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-247 Rail
Rectifier Diodes & Bridges; ISL9R3060G2; ON SEMICONDUCTOR; 2; 30 A; 600 V; 100 µA
ISL9 Series Single 600 V 30 A 35 ns Through Hole Stealth Diode - TO-247-2
DIODE, FAST, 30A, 600V, TO-247; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:45ns; Forward Surge Current Ifsm Max:325A; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifrm:70A; Current Ifsm:325A; Forward Voltage:2.4V; Junction Temperature Tj Max:175°C; Package / Case:TO-247; Reverse Recovery Time trr Typ:35ns; Termination Type:Through Hole
The ISL9R3060G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • ISL9R3060G2.