onsemi ISL9R18120S3ST

ISL9R18120S Series 3.3 V 18 A 1200 V Standard Stealth Diode - TO-263AB

Rectifier Diode Switching 1.2KV 18A 70ns 3-Pin(2+Tab) D2PAK T/R

18 A, 1200 V, STEALTH DIODE Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-263AB

RECTIFIER, FAST, 18A, 1.2KV, TO-263AB; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):18A; Diode Configuration:Single; Forward Voltage VF Max:3.3V; Reverse Recovery Time trr Max:70ns; Forward Surge Cur

DIODE, FAST, 18A, 1200V, SMD; Diode Type:Fast Recovery; Voltage, Vrrm:1200V; Current, If AV:18A; Current, Ifsm:200A; Time, trr Typ:38ns; Voltage, Vf Max:3.1V; Temperature, Tj Max:150°C; Termination Type:SMD; Case Style:D2-PAK; No. of Pins:2; Current, Ifs Max:200A; Forward Current:18mA; Forward Voltage:2.7V; Time, trr Max:70ns

The ISL9R8120S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.