onsemi ISL9R1560PF2

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
$ 0.856
Obsolete
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Schede tecniche e documenti

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Datasheet7 pagine8 anni fa
Datasheet7 pagine23 anni fa

onsemi

Fairchild Semiconductor

Farnell

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2003-05-14
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Parti correlate

onsemiRHRP1560
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
DIODE, RECTIFIER, HYPERFAST, VR 600V, IF 15A, PKG TO-220 FULL-PAK, CONFIG SINGLE
Diode Ultra Fast Recovery Rectifier 600V 15A 2-Pin(2+Tab) TO-220F Rail
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
DIODE GEN PURP 600V 15A TO220FP / Diode Standard 600 V 15A Through Hole TO-220-2 Full Pack
Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC

Descrizioni

Descrizioni di onsemi ISL9R1560PF2 fornite dai suoi distributori.

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
Diode Switching 600V 15A 3-Pin(3+Tab) TO-220F Rail
DIODE, FAST, 15A, 600V, TO-220F; Diode Type:Fast Recovery; Voltage, Vrrm:600V; Current, If AV:15A; Current, Ifsm:200A; Time, trr Typ:25ns; Voltage, Vf Max:2.2V; Temperature, Tj Max:150°C; Termination Type:Through Hole; Case Style:TO-220F; No. of Pins:2; Current, Ifs Max:200A; Forward Voltage:2.2V; Time, trr Max:40ns; Current, Ifrm:30A
The ISL9R1560PF2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
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  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd