onsemi ISL9R1560P2

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
$ 0.872
Obsolete
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Schede tecniche e documenti

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Datasheet10 pagine6 anni fa
Datasheet10 pagine23 anni fa

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

Parti correlate

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DIODE GEN PURP 600V 15A TO220FP / Diode Standard 600 V 15A Through Hole TO-220-2 Full Pack
Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC

Descrizioni

Descrizioni di onsemi ISL9R1560P2 fornite dai suoi distributori.

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC
ISL Series Single 600 V 15 A 30 ns Through Mount Stealth Diode - TO-220AC
Diode Switching 600V 15A 2-Pin(2+Tab) TO-220AC Rail
15A Single 100Ã×A@600V 600V 1.8V@15A TO-220AC-2L Diodes - General Purpose ROHS
DIODE, FAST, 15A, 600V, TO-220; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Forward Voltage VF Max:2.2V; Reverse Recovery Time trr Max:40ns; Forward Surge Current Ifsm Max:200A; Diode Case Style:TO-220; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifrm:30A; Current Ifsm:200A; Forward Voltage:2.2V; Junction Temperature Tj Max:175°C; Package / Case:TO-220; Reverse Recovery Time trr Typ:30ns; Termination Type:Through Hole
The ISL9R1560P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Alias del produttore

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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
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  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • ISL9R1560P2.