onsemi HUF75545S3S
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HUF75545S3S.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
Parti correlate
InfineonAUIRFS4410Z
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
InfineonIPB080N06N G
Power Field-Effect Transistor, 80A I(D), 60V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronicsSTB100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
STMicroelectronicsSTH80N10F7-2
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
Descrizioni
Descrizioni di onsemi HUF75545S3S fornite dai suoi distributori.
75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 80V 75A D2PAK
Trans MOSFET N-CH 80V 75A 3-Pin(2+Tab) D2PAK Rail
PWR MOS ULTRAFET 80V/75A/0.010 OHMS N-CH
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation270 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation270 W
Rds On Max10 mΩ
Rise Time125 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)80 V
Dimensions
Height5.08 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HUF75545S3S.
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità