onsemi HGTG7N60A4D
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HGTG7N60A4D.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-24
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Parti correlate
InfineonIRG4PC30SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
InfineonIRG4PC40KDPBF
IRG4P Series Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3
STMicroelectronicsSTGW20V60F
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Descrizioni
Descrizioni di onsemi HGTG7N60A4D fornite dai suoi distributori.
Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
125W 1.9V withbuilt-indiode 600V 34A TO-247-3 15.87mm*4.82mm*20.82mm
Single Igbt, 600V, 34A; Corriente De Colector Dc:34A; Tensión De Saturación Colector-Emisor Vce(On):1.9V; Disipación De Potencia Pd:125W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG7N60A4D
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current34 A
Current Rating34 A
Element ConfigurationSingle
Fall Time85 ns
Max Collector Current34 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Reverse Recovery Time22 ns
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HGTG7N60A4D.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità