onsemi HGTG18N120BN

Trans IGBT Chip N=-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
Obsolete
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Schede tecniche e documenti

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onsemi

Datasheet10 pagine6 anni fa
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Datasheet0 pagine0 anni fa

IHS

Upverter

TME

Fairchild Semiconductor

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-11-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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Descrizioni

Descrizioni di onsemi HGTG18N120BN fornite dai suoi distributori.

Trans IGBT Chip N=-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
Verical
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
IHS
390W 2.45V 2.7V@ 15V,18A 54A TO-247-3 15.87mm*4.82mm*20.82mm
UnikeyIC
54 A 1200 V N-CHANNEL IGBT TO-247
Component Stockers USA
IGBT, 54A, 1200V, N-CHANNEL, TO-
Vigor Components
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:390W; Package/Case:TO-247 ;RoHS Compliant: Yes
Newark
HGTG18N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Fairchild Semiconductor

Immagini

Newark
TME
Rochester Electronics
UTSource

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