onsemi HGTG12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Rail

IGBT, N, 3-TO-247; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 104W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati

Single Igbt, 600V, 24A; Collector Current:24A; Power Dissipation:104W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG12N60C3D

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dorp varies only moderately 25°C and 150°C. The IBGT used is the development type TA49123. The diode in anti parallel with the IGBT is the development type TA49061.The IGBT is ideal for mant high voltage switching applications operating at moderate frquencies where low conduction losses are essential.Formerly Developmental Type TA49117.