onsemi H11F1VM
$ 0.617
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.47%
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Supply Chain
Country of OriginThailand
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2007-10-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi H11F1VM fornite dai suoi distributori.
Optocoupler DC-IN 1-CH Transistor DC-OUT 6-Pin PDIP White Bulk
6-Pin DIP Bilateral Analog FET Output Optocoupler
OPTOCOUPLER, GATE DRIVE-O/P, 7.5KV, DIP6; OPTOCOUPLER, GATE DRIVE-O/P, 7.5KV, DIP6; No. of Channels: 1 Channel; Optocoupler Case Style: DIP; No. of Pins: 6Pins; Isolation Voltage: 7.5kV; Product Range: H11FXM Series
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.47%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDIP
Contact PlatingTin
MountThrough Hole
Number of Pins6
Weight855 mg
Technical
Collector Emitter Breakdown Voltage30 V
Dark Current50 nA
Fall Time45 µs
Forward Current60 mA
Forward Voltage1.75 V
Isolation Voltage7500 Vrms
Max Input Current60 mA
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation100 mW
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Power Dissipation300 mW
Reverse Breakdown Voltage5 V
Reverse Voltage (DC)5 V
Rise Time45 µs
Conformità
Classificazione ambientale
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità