onsemi FSB660A
$ 0.199
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Cronologia dell'inventario
Tendenza a 3 mesi: -76.57%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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onsemi2SA1162YT1
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 120 @ 2mA 6V 150mA 200mW 80MHz
ROHM2SA2094TLQ
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Toshiba2SA1162-GR,LF
Single Bipolar Transistor, PNP, 50 V, 150 mA, 200 mW, SOT-346, 3 Pins, Surface Mount
Toshiba2SA1162-Y,LF
Single Bipolar Transistor, PNP, 50 V, 150 mA, 200 mW, SOT-346, 3 Pins, Surface Mount
Descrizioni
Descrizioni di onsemi FSB660A fornite dai suoi distributori.
TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),SOT-23
Trans GP BJT PNP 60V 2A 500mW 3-Pin SOT-23 T/R / TRANS PNP 60V 2A SSOT-3
FSB660A Series 60 V 500 mW PNP Low Saturation Transistor - SuperSOT-3
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
300mV@ 200mA,2A PNP 500mW 5V 100nA 60V 60V 2A SOT-23-3 2.92mm*1.4mm*950¦Ìm
These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.
TRANSISTOR, BIPOL, PNP, -60V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power Dissipation Pd:500mW; DC Collector Current:-2A; DC Current Gain hFE:40hFE; Tr
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -76.57%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating-2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency75 MHz
Gain Bandwidth Product75 MHz
hFE Min250
Max Breakdown Voltage60 V
Max Collector Current2 A
Max Frequency75 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityPNP
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency75 MHz
Voltage Rating (DC)-60 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità