onsemi FSB560A
$ 0.236
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Cronologia dell'inventario
Tendenza a 3 mesi: -61.30%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
PanasonicDSC200100L
TRANSISTOR, BIPOLAR, NPN, 50V, 100mA, SOT-23; Transistor Polarity: NPN; Collector
PanasonicDSC2001R0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA
PanasonicDSC2001S0L
Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 290 @ 2mA 10V 100mA 200mW 150MHz
Descrizioni
Descrizioni di onsemi FSB560A fornite dai suoi distributori.
Bipolar Transistors - BJT NPN Transistor Low Saturation
Trans GP BJT NPN 60V 2A 500mW 3-Pin SOT-23 T/R / TRANS NPN 60V 2A SSOT-3
60V 500mW 250@500mA,2V 2A NPN SSOT-3 Bipolar Transistors - BJT ROHS
FSB660A Series 60 V 500 mW NPN Low Saturation Transistor - SuperSOT-3
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.5W; DC Current Gain Min (hfe):250; Package/Case:SuperSOT-3; C-E Breakdown Voltage:60V; DC Collector Current:2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -61.30%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency75 MHz
Gain Bandwidth Product75 MHz
hFE Min250
Max Breakdown Voltage25 V
Max Collector Current2 A
Max Frequency75 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency75 MHz
Voltage Rating (DC)60 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità