onsemi FQU2N60CTU
$ 0.427
EOL
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Distributori autorizzati
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Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQU2N60CTU | 307.440 | 2084 | 17h | ||||||||
| Rochester Electronics | FQU2N60CTU | 9 | 14h | |||||||||
| Flip Electronics | FQU2N60CTU | 307.440 | 6d | |||||||||
| Farnell | FQU2N60CTU | 0 | 1 | 1d | ||||||||
| Microchip USA | FQU2N60CTU | 372 | 600 | Bulk | 7h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Schede tecniche e documenti
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Modelli CAD
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|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-07-27
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTU2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in IPAK package
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
Descrizioni
Descrizioni di onsemi FQU2N60CTU fornite dai suoi distributori.
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
600V 1.9A 2.5W 4.7´Î@10V950mA 4V@250Ã×A N Channel TO-251-3 MOSFETs ROHS
MOSFETs 600V N-Channel Adv Q-FET C-Series
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Channel 600V 1.9A IPAK
RS APAC
MOSFET, N-CH, 600V, 1.9A, 150DEG C, 44W;
2.5W(Ta),44W(Tc) 30V 4V@ 250¦ÌA 12nC@ 10 V 1N 600V 4.7¦¸@ 950mA,10V 1.9A 235pF@25V TO-251 6.8mm*2.5mm*6.3mm
POWER FIELD-EFFECT TRANSISTOR, 1
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance235 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.7 Ω
Resistance4.7 Ω
Rise Time25 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)600 V
Dimensions
Height9.85 mm
Length6.6 mm
Width2.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQU2N60CTU.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità