onsemi FQU10N20CTU
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQU10N20CTU | 0 | 5040 | Tube | 8h | |||||||
| Microchip USA | FQU10N20CTU | 328 | 300 | Tray | 15h | |||||||
| Component Stockers USA | FQU10N20CTU | 3765 | 1d | |||||||||
| Win Source | WS-FQU10N20CTU | 27.310 | 90 | 23h | ||||||||
| Worldway Electronics | FQU10N20CTU | 15.707 | 7 | Tube | 22h |
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-05
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Descrizioni
Descrizioni di onsemi FQU10N20CTU fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)7.8 A
Current Rating7.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time72 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance510 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max360 mΩ
Rise Time92 ns
Schedule B8541290080
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)200 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità