onsemi FQT2P25TF
$ 0.38
EOL
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-04
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FQT2P25TF fornite dai suoi distributori.
TRANSISTOR, P-CHANNEL, QFET MOSFET, -250V, -0.55A, 4.0 OHM, SOT-223
Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R
P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω
Transistor, mosfet, p-Channel,250V V(Br)Dss,550Ma I(D),sot-223 Rohs Compliant: Yes |Onsemi FQT2P25TF
MOSFET, P-CH, -250V, -0.55A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -550mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 3.15ohm; Rds(on) Test V; Available until stocks are exhausted
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)550 mA
Current Rating-550 mA
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max4 Ω
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)-250 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità