These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor

Alias del produttore

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ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
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ON Semi - ON Semiconductor
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ON-SEMI SCG
ON Semiconductor Inc.
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On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: Restocked

Specifiche tecniche

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight2.27 g

Technical

Continuous Drain Current (ID)9 A

Current Rating9 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance800 mΩ

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time64 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance1.03 nF

Max Operating Temperature150 °C

Max Power Dissipation44 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation44 W

Rds On Max800 mΩ

Rise Time65 ns

Turn-Off Delay Time93 ns

Voltage Rating (DC)500 V

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQPF9N50CT.

IHS

Datasheet13 pagine23 anni fa

onsemi

Fairchild Semiconductor

Conformità

Classificazione ambientale

Lead FreeLead Free

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A