onsemi FQPF7P20
$ 0.839
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Cronologia dell'inventario
Tendenza a 3 mesi: +104%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FQPF7P20 fornite dai suoi distributori.
Power MOSFET, P-Channel, QFET®, -200 V, -5.2 A, 690 mΩ, TO-220F
Trans MOSFET P-CH 200V 5.2A 3-Pin(3+Tab) TO-220FP Tube
Transistor,mosfet,p-Channel,200V V(Br)Dss,5.2A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQPF7P20
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +104%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.2 A
Current Rating-5.2 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance770 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max690 mΩ
Rise Time110 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-200 V
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità