onsemi FQPF6N80CT
$ 0.964
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-07
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
STMicroelectronicsSTP7NK80ZFP
STP7NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 3-PIN TO-220FP
STMicroelectronicsSTP6NK90ZFP
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP5NK80ZFP
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Descrizioni
Descrizioni di onsemi FQPF6N80CT fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max2.5 Ω
Rise Time65 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time26 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità