onsemi FQPF30N06L
$ 0.532
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -11.83%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIRFIZ34NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Descrizioni
Descrizioni di onsemi FQPF30N06L fornite dai suoi distributori.
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 22.5 A, 52 mΩ, TO-220F
N-Channel 60 V 22.5 A 35 mOhm QFET® Mosfet TO-220F
Trans MOSFET N-CH 60V 22.5A 3-Pin(3+Tab) TO-220F Rail
MOSFET, N-CH, 60V, 22.5A, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 22.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -11.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)22.5 A
Current Rating22.5 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.04 nF
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rds On Max35 mΩ
Rise Time210 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità