onsemi FQPF17N40T
$ 1.205
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-20
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
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Descrizioni
Descrizioni di onsemi FQPF17N40T fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 400 V, 9.5 A, 270 mΩ, TO-220F
Trans MOSFET N-CH 400V 9.5A 3-Pin(3+Tab) TO-220FP Tube
56W(Tc) 30V 5V@ 250µA 60nC@ 10V 1individualNChannel 400V 270mΩ@ 4.75A,10V 9.5A 2.3nF@25V TO-220F Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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0 modelli disponibili
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)9.5 A
Current Rating16 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.3 nF
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation56 W
Rds On Max270 mΩ
Rise Time185 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)400 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità