onsemi FQP8N60C
$ 1.085
Obsolete
Prezzo e stock
Distributori autorizzati
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.02%
Modelli CAD
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Schede tecniche e documenti
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2011-12-13
LTD Date2012-06-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Descrizioni
Descrizioni di onsemi FQP8N60C fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail
147W(Tc) 30V 4V@ 250¦ÌA 36nC@ 10 V 1N 600V 1.2¦¸@ 3.75A,10V 7.5A 1.255nF@25V TO-220-3 9.4mm
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd:
Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:7.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Onsemi FQP8N60C.
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)7.5 A
Current Rating7.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time64.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.255 nF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation147 W
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time60.5 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time81 ns
Turn-On Delay Time16.5 ns
Voltage Rating (DC)600 V
Dimensions
Height9.4 mm
Length10.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP8N60C.
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità