onsemi FQP7N80C
$ 0.929
EOL
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-05
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Descrizioni
Descrizioni di onsemi FQP7N80C fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)6.6 A
Current Rating6.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.9 Ω
Drain to Source Voltage (Vdss)800 V
Dual Supply Voltage800 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.68 nF
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation167 W
Rds On Max1.9 Ω
Resistance1.5 Ω
Rise Time100 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time50 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)800 V
Dimensions
Height9.4 mm
Length10.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP7N80C.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità