onsemi FQP24N08
EOL
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Descrizioni
Descrizioni di onsemi FQP24N08 fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 80 V, 24 A,, 60 mΩ, TO-220
Transistor, mosfet, n-Channel,80V V(Br)Dss,24A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP24N08
Trans MOSFET N-CH 80V 24A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 24A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance750 pF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Rds On Max60 mΩ
Rise Time105 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)80 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità