onsemi FQP17P06
$ 0.88
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF9Z34NPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FQP17P06 fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220
Power Field-Effect Transistor, 17A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-17A; Current Temperature:25°C; Device Marking:FQP17P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:TO-220; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +34.42%
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)17 A
Current Rating-17 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height20.4 mm
Length10.1 mm
Schede tecniche e documenti
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Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità