onsemi FQP11P06

P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220
$ 0.439
Obsolete
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IHS

Datasheet8 pagine12 anni fa
Datasheet0 pagine0 anni fa

Future Electronics

onsemi

Fairchild Semiconductor

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-14
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descrizioni

Descrizioni di onsemi FQP11P06 fornite dai suoi distributori.

P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220
Trans MOSFET P-CH 60V 11.4A 3-Pin(3+Tab) TO-220AB Rail
Mosfet, P-Ch, 60V, 11.4A, 175Deg C, 53W Rohs Compliant: Yes |Onsemi FQP11P06
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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