onsemi FQP11P06
$ 0.391
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.89%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FQP11P06, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 SnapEDA | Impronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-14
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
NXP SemiconductorsBUK95150-55A,127
Trans MOSFET N-CH 55V 13A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Rail
InfineonIRF9Z24NPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -12A;TO-220AB;PD 45W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FQP11P06 fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -60 V, -11.4 A, 175 mΩ, TO-220
Trans MOSFET P-CH 60V 11.4A 3-Pin(3+Tab) TO-220AB Rail
Mosfet, P-Ch, 60V, 11.4A, 175Deg C, 53W Rohs Compliant: Yes |Onsemi FQP11P06
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
53W(Tc) 25V 4V@ 250µA 17nC@ 10V 1individualPChannel 60V 175mΩ@ 5.7A,10V 11.4A 550pF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.89%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11.4 A
Current Rating-11.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance550 pF
Max Operating Temperature175 °C
Max Power Dissipation53 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation53 W
Rds On Max175 mΩ
Rise Time40 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height15.38 mm
Length10.1 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità