onsemi FQL40N50F
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-17
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FQL40N50F fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
N-Channel 500 V 0.11 Ohm Through Hole Mosfet - TO-264
Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-264 Rail
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
MOSFET, N-CH, 500V, 40A, TO-264;
DGTL ISO 2500VRMS 2CH GP 8SOIC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-264
MountThrough Hole
Number of Terminals3
Weight6.756 g
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time250 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.5 nF
Max Operating Temperature150 °C
Max Power Dissipation460 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation460 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time440 ns
Turn-Off Delay Time350 ns
Turn-On Delay Time140 ns
Voltage Rating (DC)500 V
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità