onsemi FQI27N25TU
$ 1.35
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQI27N25TU | 912 | 209 | |||||||||
| Rochester Electronics | FQI27N25TU | 11.364 | 1d | |||||||||
| Newark | FQI27N25TU | 0 | 1K | |||||||||
| Farnell | FQI27N25TU | 0 | 1K | Tube | 10h | |||||||
| Microchip USA | FQI27N25TU | 135 | 600 | Bulk | 16h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi FQI27N25TU, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Parti correlate
onsemiFQI32N20CTU
Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiFDI33N25TU
MOSFET N-CH 250V 33A I2PAK / N-Channel 250 V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)
Descrizioni
Descrizioni di onsemi FQI27N25TU fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 250 V, 25.5 A, 110 mΩ, I2PAK
Trans MOSFET N-CH 250V 25.5A 3-Pin(3+Tab) I2PAK Rail
N-Channel 250 V 0.11 O Through Hole Mosfet - I2PAK
Qf 250V 110Mohm I2Pak Rohs Compliant: Yes
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
POWER FIELD-EFFECT TRANSISTOR, 2
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)25.5 A
Current Rating25.5 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.45 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time270 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time32 ns
Voltage Rating (DC)250 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità