onsemi FQD4P40TM
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD4P40TM.
Modelli CAD
Scarica il simbolo onsemi FQD4P40TM, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | Scarica | |
 SnapEDA | Impronta | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTD4NK50ZT4
N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET
VishayIRFR420TRPBF
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
Descrizioni
Descrizioni di onsemi FQD4P40TM fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -400 V, -2.7 A, 3.1 Ω, DPAK
Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -400V, -2.7A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.7A; Drain Source Voltage Vds: -400V; On Resistance Rds(on): 2.44ohm; Rds(on) Test Vo; Available until stocks are exhausted
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.7 A
Current Rating-2.7 A
Drain to Source Breakdown Voltage-400 V
Drain to Source Resistance3.1 Ω
Drain to Source Voltage (Vdss)-400 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.1 Ω
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-400 V
Dimensions
Height2.517 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD4P40TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità